Molding compound flow controller

ABSTRACT

A semiconductor package can comprise a die stack attached to a substrate, with bond wires electrically connecting the two. Often multiple die stacks are adhered to a single substrate so that several semiconductor packages can be manufactured at once. A molding compound flow controller is optimally associated with the substrate or semiconductor package at one or more various locations. Flow controllers can control or direct the flow of the molding compound during the encapsulation process. Flow controllers can be sized, shaped, and positioned in order to smooth out the flow of the molding compound, such that the speed of the flow is substantially equivalent over areas of the substrate containing dies and over areas of the substrate without dies. In this manner, defects such as voids in the encapsulation, wire sweeping, and wire shorts can be substantially avoided during encapsulation.

FIELD

The disclosure concerns packaging for semiconductors.

BACKGROUND

Manufacturers consistently try to reduce the size of products, such ascellular telephones, computers, and digital cameras in order to meetconsumer demands. All of these electronic products require integratedcircuit (IC) assemblies. Thus, it is important to continue to reduce thesize of these IC assemblies, without sacrificing performance, in orderto reduce the overall product size.

IC assemblies may include a plurality of interconnected IC chips, whichalso are referred to as dies. One or more dies are stacked in aparticular location on a substrate surface. The substrate location isreferred to as a die attach area. Typically, an array of such die stacksis formed on a substrate, and the die stacks are separated intoindividual packages along saw lines to form the end-product. Forconvenience, this specification typically refers to plural dies;however, all statements apply equally to a semiconductor package havingonly one die.

A die stack is referred to as a single stack if there is a single diestacked in a particular location on the substrate. If plural dies arestacked on top of each other in a particular location on the substrate,the stack is referred to as a multiple stack. A semiconductor packagecan comprise one die stack (whether a single or multiple stack).Alternatively, a semiconductor package can comprise more than one diestack, and some or all of the stacks can be single stacks, while some orall of the stacks can be multiple stacks.

Dies typically are physically coupled to the substrate via an adhesivelayer. Each die also is effectively electrically connected to thesubstrate. This electrical connection can be created using thinconductive wires, such as gold wires or aluminum wires. Alternatively,dies can be electrically connected to the substrate via small solderballs, using, for example, the flip chip method. These and other methodsare well known in the industry. The area where dies are electricallycoupled to the substrate can be referred to as the conductive elementbonding area or, in the case where wire bonds are present, as the wirebonding area. Dies are first electrically connected to the substrate asdesired, and then the die substrate assembly is encapsulated by aprotective molding compound, usually comprising a polymer, ceramic,epoxy, or combinations thereof. Encapsulation protects the dies andelectrical connections by creating a moisture barrier to preventphysical, chemical and/or electrical damage to the components.

The substrate, die stack, and encapsulating material combine to form a“package.” A cross sectional drawing of a representative prior artpackage 100 is illustrated in FIG. 1. Illustrated package 100 comprisesa substrate 102 and four stacked dies 104, 106, 108, 110 attached tosubstrate 102 or to another die, via die adhesive layers 103, 105, 107,and 109. Package 100 further comprises solder balls 112 along onesurface of substrate 102. Solder balls 112 provide input and outputaccess to dies 104, 106, 108, and 110 once package 100 is connected to acircuit board for use in an electronic product. Semiconductor package100 has been encapsulated with molding compound 114. Plural conductivebond wires 118 electrically couple each die 104, 106, 108, and 110 tosubstrate 102.

Numerous different packages 100 are known and used in the art. Somecommon examples include the polymer ball grid array package, such as theplastic ball grid array (PBGA) package, and the fine ball grid array(FBGA) package. The package also can include a heat spreader, whichcovers the dies and conductive wires, in order to improve heat transfer,such as during the encapsulation process. Although semiconductorpackages, such as package 100, are widely used, however problems stillexist with the encapsulation process.

Still with reference to FIG. 1, during the encapsulation process, a moldis placed over dies 104, 106, 108, and 110 and substrate 102, leaving asmall gap 116 between the top of molding compound 114 and the top of die110. Gap 116 is herein referred to as the encapsulant gap 116, and alsorepresents the distance between the top of die 110 and the packagesurface once encapsulation is complete. Once the mold is in place, amolding compound 114 is injected into the mold, and flows over dies 104,106, 108, and 110 inside the mold. Molding compound 114 typically isinjected at a temperature high enough that molding compound 114 is in aliquid or semi-liquid state, and therefore flows over dies 104, 106,108, and 110 and substrate 102. Molding compound 114 then cools andhardens to protect substrate 102, dies 104, 106, 108, and 110, andelectrical connections, such as bond wires 118.

The encapsulant gap has a significant impact on the molding process. Asmentioned above, manufacturers need to keep package size as small aspossible, even though dies often are stacked to create IC assemblies touse space most efficiently. As dies are stacked, the encapsulant gapdecreases. But as the encapsulant gap decreases, molding compound flowis affected and can become uneven. As a result, various defects in thefinished product, such as internal and external voids, wire sweeping,and wire shorts, can occur. Internal and external voids are essentiallyareas where air has been trapped by molding compound (where air fails toescape), resulting in holes or voids in the package. External voids cansubject the device to moisture damage, which can ruin the device.Internal voids may expand if exposed to heat and eventually cause thepackage layers to separate. In semiconductor packages containing bondwires, another potential problem during the molding process is wiresweeping, where molding compound deforms or breaks the conductive wires,or causes two different bonding wires to contact, creating electricalshorts in the device.

Devices do exist ostensibly designed to reduce air pocket formation. Forexample, see U.S. Pat. No. 6,969,640 to Dimaano et al., which disclosesan “air pocket resistant semiconductor package system.” Dimaanodiscloses using individual heat spreaders placed around each die. Eachheat spreader has an encapsulant guide and an air vent, to prevent airpocket formation.

Additionally, U.S. Pat. No. 6,750,533 to Wang et al., discloses a“substrate with dam bar structure for smooth flow of encapsulatingresin.” Wang's FIG. 1 shows a plan view of a semiconductor packagecomprising dam bar 56 on substrate 5. “The dam bar 56 formed on thesubstrate 5, as shown in FIG. 1, is preferably provided with a firstgate 560 directed toward the molding gate 55, a second gate 561, and athird gate 562 opposed to the second gate 561, wherein the second andthird gates 561, 562 are vertically arranged in position with respect tothe molding gate 55; this allows the dam bar 56 to be divided into foursections by means of the first, second and third gates 560, 561, 562.”Column 4, line 66 through column 5, line 6. “The first gate 560 is sizedsmaller than the second and third gates 561, 562 respectively.” Column5, lines 7-8. “The geometry, shape and height of the dam bar 56 arecritical factors for affecting mold flow of the encapsulating compound.”The molding compound is “impeded by the dam bar 56, and diverts to flowthrough the second and third gates 561, 562.” Column 5, lines 20-21.

“As shown in [Wang] FIG. 3A, a simple dam bar 56 a is formed with a gate560 a directed toward the molding gate 55, and has found to beineffective for impeding mold flow of the molding compound.” Column 5,lines 51-54. “A dam bar 56 b of [Wang] FIG. 3B is similar in structureto the dam bar 56 a of [Wang] FIG. 3A, with the difference in that thedam bar 56 b is dimensioned with increased length, and a gate 560 b ofthe dam bar 56 b is sized smaller than the gate 560 a of the dam bar 56a. It has been found that, such a dam bar 56 b would reduce a flowingspeed of the molding compound.” Column 5, lines 55-60. Thus, theproperly sized gate is identified as a critical factor by Wang.

Wang FIG. 4 shows a plan view of a semiconductor package comprising dambar 65 positioned on substrate 6, with flow of the molding compoundindicated by the arrow. However, as positioned in Wang FIG. 4, dam bar65 does not appear capable of controlling the flow of molding compoundover each of the chips 63. For example, dam bar 65 is not positioned toeffectively control molding compound flow over chip 63.

Moreover, Wang discloses only curvilinear or rectangular dam barsgeometry, as illustrated in Wang FIG. 1, 3A, 3B, and 4. The height ofthe dam bar disclosed in Wang must be at least 75% of the height of themold cavity. The dam bar impedes molding compound flow by forcing themolding compound through the gates of the dam bar. Column 6, lines18-30. As such, the dam bars disclosed in Wang are not well-suited foruse in an arrayed semiconductor package with saw lines.

The prior art does not address all potential problems associated withmolding compound flow and the encapsulation process. For example, knowndevices and methods do not effectively control molding compound flowover all areas of the semiconductor package.

SUMMARY

Molding compound typically flows more slowly over dies than it does oversubstrate areas lacking dies. Where there is no die stack, theencapsulant gap is the entire distance between the substrate and packagesurface, as opposed to the distance between the top of the die stack andthe package surface, where there is a die stack. As a result, theleading edge of molding compound flow deviates from a straight line.Molding compound flow deviation is smallest at the beginning of the flowprocess, increases as it flows over the surface, and is at the maximumat the end of the encapsulation process. These large deviations canresult in the encapsulation defects discussed above.

To facilitate molding compound flow during encapsulation, one embodimentof a disclosed semiconductor package comprises a substrate, a dieelectrically coupled to the substrate, and a flow controller effectivelysized and positioned to control flow of a molding compound. Plural flowcontrollers also can be provided. Any embodiment can additionallyoptionally include a passive component or plural passive components.Flow controllers as disclosed and claimed herein are not taught by theprior art discussed above. For example, with the claimed embodiment,molding compound flows over and about the flow controllers during theencapsulation process, as opposed to through gates. In some embodiments,flow controllers facilitate effective molding compound flow to, forexample, reduce encapsulation defects such as air voids, wire sweeping,and wire shorts. Flow controllers also can divert molding compound flowfrom a particular area or direct molding compound flow to a particulararea if desired.

Generally, the material used to produce flow controllers is not a solidat the time of positioning, but instead typically has a viscosity fromabout 2,000 to about 6,000 (centipoise cP) at 25° C. Before the moldingprocess takes place, flow controllers may solidify, in order to maintaintheir position during encapsulation. Materials with a higher viscositycan be used to help prevent, or can comprise adhesive on a portionthereof, flow controllers from contacting elements within thesemiconductor package. Flow controllers can be composed of a singlematerial or can comprise any number of materials, including die adhesive(e.g. epoxy with silicon or Teflon filler), die coating material (e.g.polyimide), polymeric materials, screen printing materials, solder paste(e.g. Sn, SnAgCu), or combinations thereof. Flow controllers cancomprise a non-insulating material. Flow controllers can compriseadhesive material, to allow for direct attachment to a desired surfaceor component, such as the substrate. Alternatively, flow controllers maycomprise a composite, where a layer of adhesive material is applied to asurface within the package and a polymer or “dummy” block is coupled tothe layer of adhesive, in order to control molding compound flow. Dummyblocks provide certain advantages in the claimed products and processes,such as reducing the need to use larger amounts of adhesive material tocontrol flow over a large area of the substrate.

Molding compound flow controllers can be used in any semiconductorpackage. Embodiments can be implemented with a semiconductor packagecomprising a single die, plural dies, and/or an array of dies. Asemiconductor package comprising an array of dies can have single stacksand/or multiple stacks. Flow controllers can be applied to a package atany point during the process of making the semiconductor package, suchas before, during, or after die attachment, or, in packages whichcontain wire bonds, before, during, or after wire bonding. Flowcontrollers can be positioned and applied using any suitable technique,including without limitation, epoxy dispensing and attach systems, epoxydotting and attach systems, die coating, or screen printing.

Flow controllers can be positioned as desired within the semiconductorpackage to facilitate encapsulation over all active components coupledto the substrate. Flow controllers can be coupled to the substrate,dies, and/or any other structures within the package. Alternatively,flow controllers can be positioned such that they are coupled to anyinterposers that may be present within the semiconductor package.

The numbers, sizes, shapes, and locations of flow controllers can beselectively determined and optimized based on die and/or bond wirelayout in a particular package. Flow controllers can take any shape,such as substantially rectangular, cubic, spherical, cylindrical,conical, or pyramidal. Flow controllers also can be amorphous, or cancomport to the shape of components and structures. When a semiconductorpackage comprises plural flow controllers, each flow controller may bethe same, or may be a different shape, size, and/or composition.

Flow controller dimensions and position can be determined by anyappropriate method, such as by trial and error, with computer software,or via a remote computer. Any embodiment can be implemented by acomputer, such as by executing instructions for flow controllerpositioning contained by computer readable media. Flow controllers canbe positioned in a symmetrical or asymmetrical fashion relative to otherpackage components. They can be positioned on one side or on multipledifferent sides of the dies. When plural flow controllers arepositioned, they can be positioned independently of one another.

In some embodiments, flow controllers can be positioned so that they donot contact the dies. Alternatively, flow controllers can contact thedies, any bond wires present and/or the substrate space in between thedie stacks. A flow controller can be positioned such that at least aportion of the flow controller is within a perimeter defined by thedies, between adjacent dies, and/or within a perimeter defined byconductive elements. When the semiconductor package comprises an arrayof dies, flow controllers can be positioned outside a perimeter definedby the array or, alternatively, within a perimeter defined by the array.Further, in embodiments including saw lines between individual diestacks, flow controllers can be positioned such that they extend overthe saw lines, covering the entire distance between die stacks.Alternatively, flow controllers can be positioned so that they are notcontinuous between the die stacks, in that there is an interruption inflow controller material at the locations of saw lines. In this manner,flow controllers will not be visible on the side edges of thesemiconductor packages after singulation.

In semiconductor packages further comprising bonding wires, flowcontrollers can be small enough to be positioned between adjacentbonding wires, and/or substantially within a perimeter defined by thebond wires. In this embodiment, the flow controller may be positionedsuch that it does not contact the bonding wires or a die. Alternatively,a flow controller can be positioned such that it does contact bondwires, or a flow controller may substantially embed a bond wire orwires. In one embodiment, a single flow controller may constitute asingle integrated body which contacts the surfaces of the substrate,bond wires, and dies. As another option, flow controllers can bepositioned outside the perimeter defined by the bonding wires. In otherembodiments, flow controllers can be located such that a portion of aflow controller is located within the perimeter defined by the bondwires, and a portion of the same flow controller is located outside theperimeter defined by the bond wires. Flow controllers can be coupled tothe substrate in any and all of these embodiments.

When a single package contains more than one flow controller, multipleflow controllers can be arranged as desired. For example, in oneembodiment, some flow controllers can be located outside a perimeterdefined by the bond wires, while others can be located within aperimeter defined by the bond wires. In another embodiment, a flowcontroller can be located such that a first portion is within theperimeter defined by the bond wires, while a second portion is outsidethe perimeter defined by the bond wires, and while a second flowcontroller can be positioned entirely outside the perimeter defined bythe bond wires. In yet another embodiment, a flow controller can belocated such that a first portion is within the perimeter defined by thebond wires, while a second portion is outside the perimeter defined bythe bond wires, and while a second flow controller can be positionedentirely within the perimeter defined by the bond wires. Additionally,in some embodiments, all three of these general positions could bepresent within a single semiconductor package.

Flow controller height can be selected to optimize control of moldingcompound flow, and can be much smaller than that of the dies,substantially the same as that of the dies larger than the dies, or anysize in between. Furthermore, if plural flow controllers are used, eachcan have different size and/or shape, all can have the same size and/orshape, or any and all combinations of shape and size. At a minimum, flowcontroller height can be any dimension greater than zero which stillallows for functionality as a flow controller. The upper limit of flowcontroller height is determined by molding compound thickness. If flowcontrollers extend above the top of the molding compound, damage to themolding tool is possible. A relatively thin flow controller may requiregreater surface area to have the same impact on molding compound flow,as flow controller volume may be a factor for controlling moldingcompound flow. In commercial embodiments, the minimum flow controllervolume typically is about 1×10⁻³ cc; however, flow controller volume canbe any volume greater than zero which still allows for functionality asa flow controller. In some embodiments, flow controller volume isgreater than 1×10⁻² cc. The upper limit for flow controller volume isthe difference between the volume of molding compound in a certainpackage and the volume of stacked dies and die adhesive layers containedwithin the package.

A disclosed method for manufacturing a semiconductor package comprisesproviding a substrate and a flow controller operatively associated withthe substrate and effectively sized and positioned to control flow of amolding compound. Alternatively, plural flow controllers may beprovided. During the encapsulation process molding compound flows overthe surface of the flow controllers, dies, and substrate, as in thetypical encapsulation process. In one embodiment, using flow controllersdoes not require altering the encapsulation process beyond applicationof the flow controllers themselves.

Disclosed method for using flow controllers comprises providing a flowcontroller operable to influence or control flow of a molding compound.For example, flow controllers can reduce the speed of molding compound,direct its flow, and/or divert flow of a molding compound from certainareas of the semiconductor package. In some embodiments, flowcontrollers substantially create a uniform leading edge of moldingcompound flow and, as a result, reduce the occurrence of defects duringencapsulation. Thus, flow controllers substantially can prevent internaland external voids, wire sweeping, and wire shorts, and can facilitatefilling a narrow encapsulant gap.

Semiconductor packages, generally such as fine ball grid array packagesand polymer ball grid arrays, such as plastic ball grid arrays, may bemanufactured according to the disclosed methods. Once encapsulation iscomplete, semiconductor packages with flow controller elements can beincorporated into any electronic product requiring IC assemblies. Theseinclude such devices as computers, personal digital assistants, digitalcameras, and cellular telephones. Instructions for providing thedisclosed flow controllers can be included on a computer readablemedium.

The foregoing and other objects, features, and advantages of theinvention will become more apparent from the following detaileddescription, which proceeds with reference to the accompanying figures.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a prior art ball grid arraysemiconductor package.

FIG. 2 is a plan view illustrating one embodiment of a ball grid arraysemiconductor package with bonded wires and a plurality of flowcontrollers.

FIG. 3 is a schematic plan view illustrating the leading edge of moldingcompound flowing over a device comprising a plurality of flowcontrollers.

FIG. 4 is a cross sectional view of a single stack ball grid arraysemiconductor package comprising a flow controller.

FIG. 5 is a plan view of blocked fine ball grid array semiconductorpackages before encapsulation.

FIG. 6 is a plan view of a single blocked fine ball grid arraysemiconductor package comprising a plurality of flow controllers.

FIG. 7 is a plan view of a prior art ball grid array semiconductorpackage illustrating molding compound flow in the absence of flowcontrollers.

FIG. 8 is a plan view of the single blocked ball grid arraysemiconductor package of FIG. 6 illustrating molding compound flow usingflow controllers according to one disclosed embodiment.

FIG. 9 is a plan view of a plastic ball grid array semiconductor packagecomprising 4 units and a plurality of flow controllers illustrating flowof molding compound at various times during the encapsulation process.

FIG. 10 is a cross sectional view of a ball grid array semiconductorpackage comprising a flow controller contacting bond wires and dies.

FIG. 11 is a cross sectional view of a ball grid array semiconductorpackage comprising a flow controller located adjacent to bond wires anddies.

FIG. 12 is a cross sectional view of the ball grid array semiconductorpackage of FIG. 10 comprising flow controllers adjacent to saw lines.

FIG. 13 is a cross sectional view of the ball grid array semiconductorpackage of FIG. 1 comprising flow controllers adjacent to the lines.

FIG. 14 is a cross sectional view of a ball grid array semiconductorpackage comprising flow controllers adjacent to bond wires and dies,where the illustrated embodiment of the flow controllers comprises adummy block and an adhesive layer.

FIG. 15 is a flowchart of one embodiment of a method for making asemiconductor package.

FIG. 16 is a flowchart of one embodiment of a method for providing flowcontrollers during semiconductor package manufacture.

FIG. 17 is a flowchart of an alternative embodiment of a method forproviding flow controllers during semiconductor package manufacture.

FIG. 18 is a flowchart of another alternative embodiment of a method forproviding flow controllers during semiconductor package manufacture.

FIG. 19 is a flowchart of another alternative embodiment of a method forproviding flow controllers during semiconductor package manufacture.

FIG. 20 is a flowchart of one embodiment of a method for directingmolding compound flow.

TERMS

As used in this application and in the claims, the singular forms “a,”“an,” and “the” include the plural forms unless the context clearlydictates otherwise. Additionally, the term “includes” means “comprises.”Further, the term “coupled” means physically, electrically and/orelectromagnetically coupled or linked and does not exclude the presenceof intermediate elements between the coupled items.

Although the operations of embodiments of the disclosed method aredescribed in a particular, sequential order for convenient presentation,it should be understood that this manner of description encompassesrearrangement, unless a particular ordering is required by specificlanguage set forth below. For example, operations described sequentiallymay in some cases be rearranged or performed concurrently. Moreover, forthe sake of simplicity, the attached figures may not show the variousways in which the disclosed system, method, and apparatus can be used inconjunction with other systems, methods, and apparatus. Additionally,the description sometimes uses terms like “produce” and “provide” todescribe the disclosed method. These terms may be high-levelabstractions of the actual operations that can be performed. The actualoperations that correspond to these terms can vary depending on theparticular implementation and are discernible by a person of ordinaryskill in the art.

DETAILED DESCRIPTION

FIG. 2 shows a plan view of a semiconductor package 200, comprising asubstrate 202 and a die 210 electrically coupled to substrate 202 by aplurality of conductive bond wires 218. FIG. 2 also illustrates variouspositions for flow controllers 220, 222, and 224 relative to otherpackage components. Each of these can be used alone, or any and allcombinations of such positioning can be used. For example, one or moreflow controllers 220 optionally can be positioned adjacent to, butsubstantially outside a perimeter defined by, bond wires 218. Pluralflow controllers 220, 222, and 224 are illustrated in FIG. 2, howeverthere may be more or fewer flow controllers in any given embodiment.

In another embodiment, one or more flow controllers 222 optionally canbe positioned substantially within the perimeter defined by bond wires218. Flow controller 222 can be coupled to substrate 202 and can bepositioned between adjacent bond wires 218, such that flow controller222 does not contact bond wires 218. Plural flow controllers 222 areillustrated in FIG. 2, however there may be more or fewer flowcontrollers 222 in any given embodiment.

In still another embodiment, one or more flow controllers 222 can bepositioned within the perimeter defined by bond wires 218, and one ormore flow controllers 220 may be positioned around the perimeter definedby bond wires 218. In yet another embodiment, one or more flowcontrollers 224 may have a first portion located within the perimeterdefined by bond wires 218, and a second portion located outside theperimeter defined by bond wires 218. As shown in FIG. 2, flowcontrollers 220, 222, and 224 do not have to be positioned relative toone another to form gates. Instead, during encapsulation, moldingcompound (not shown) flows over and about flow controllers 220, 222,and/or 224.

FIG. 2 illustrates various positions for flow controllers 220, 222, and224 for one embodiment. A person of ordinary skill in the art willrecognize that in any given embodiment, some or all of these positionsmay be used, alone or in combination. For example, flow controllers 220,222, and/or 224 can be positioned to protect a specific wire 218 or agroup of such wires 218 from damage. Flow controllers 220, 222, and/or224 also can divert molding compound flow from a specific area onsubstrate 202.

Substrate 202 can comprise any material commonly used in thesemiconductor industry. These include, but are not limited to, flexibleresin tape, fiberglass/copper sheet laminate, ceramic, flexible metallead frame, and ball grid arrays. Substrate 202 is not limited tosemiconductor materials; it can be formed of semiconducting materials,insulating materials, conducting materials, or combinations thereof.Substrate 202 optionally can include thermal vias, or holes, extendingfrom a first surface to a second surface, to allow heat to escape.

Die 210 usually comprises semiconductor materials, such as silicon,germanium, or gallium arsenide. Each die can comprise multiplesemiconductor devices, often in layers, such as can be formed viaphotolithographic techniques. Dies 210 are typically active components,in that they usually require a power supply to operate. Passivecomponents are those which do not need a power supply to function, andinclude components such as resistors, capacitors, and inductors. Inaddition to one or more dies 210, substrate 202 optionally may includeone or more passive components.

FIG. 3 shows a plan view of semiconductor device 300 comprisingsubstrate 302 and a plurality of dies 310, each which can be identicalor distinct, and each with a plurality of bond wires 318 electricallycoupling dies 310 to substrate 302. FIG. 3 also illustrates a pluralityof flow controllers 320 interspersed between dies 310. Leading edges326, 328, and 330 of molding compound flow represent three differentpoints in time as molding compound flows from left to right along device300. Leading edge 326 depicts the flow profile at a first timesubstantially at the beginning of the encapsulation process, whileleading edge 328 is at a second time near the middle of the process, andleading edge 330 depicts the flow profile at a third time nearingcompletion of encapsulation. Flow controllers 320 can facilitate moldingcompound flow, such as to keep leading edge 326 substantially similar toleading edges 328 and 330. The more smoothly molding compound flows, theless likely defects are to develop. Thus, flow controllers 320substantially can prevent defects from forming in the encapsulateddevice. In this as well as all other embodiments, variable features offlow controllers 320, such as volume, surface area, shape, and location,can be optimized based on the structure of semiconductor package 300 ordies 310 or based on the desired effect on molding compound flow.

FIG. 4 shows a cross sectional view taken along line 4-4 in FIG. 3. Asingle die 404 is physically attached to substrate 402 by die adhesivelayer 403, and electrically coupled to substrate 402 via bond wires 418.Flow controller 420 is shown coupled to substrate 402, and adjacent todie 404 and bond wires 418. In the illustrated embodiment of FIG. 4, theheights of flow controller 420 and die 404 are substantially similar.However, in other embodiments, flow controller 420 heights can beselected for a particular purpose. As a result, in other embodiments,there is no particular height required for flow controller 420, nor doesits height have to be substantially similar to the height of die 404.The embodiment shown in FIG. 4 optionally can include additional dies404 and adhesive layers 403, which may comprise devices identical to ordifferent from die 404.

FIG. 5 shows a plan view of semiconductor package 500 beforeencapsulation, comprising substrate 502, and a plurality of dies 506,508, and 510 arrayed on substrate 502. Dies 506, 508, and 510 arestacked and arranged into four blocks 511. As shown in FIG. 5, each diestack comprises die 506 adhered to substrate 502, die 508 adhered to die506, and die 510 adhered to die 508. As one skilled in the art willrecognize, dies 506, 508, and 510 may be identical or distinct devices.Dies 506, 508, and 510 are not limited in any way by their depiction inFIG. 5; there may be additional dies stacked amongst dies 506, 508, and510. Further, as shown in FIG. 5, die 510 has a smaller footprint thandie 508, which in turn has a smaller footprint than die 506. FIG. 5illustrates only one embodiment of possible arrangements of dies. Inother embodiments, die 510 may have a larger or smaller footprint thandie 508, which may have a larger or smaller footprint than die 506 orany other dies present in the stack.

Package 500 further comprises a plurality of flow controllers 520interspersed between stacked dies 506, 508, and 510. In this embodiment,flow controllers 520 are located inside a perimeter defined by eachblock 511, adjacent to dies 506, 508, and 510. In alternativeembodiments, flow controllers 520 optionally can be positioned atvarious other locations, such as in areas of substrate 502 betweenblocks 511, or adjacent to some dies 506, 508, and 510, but not others.

FIG. 6 shows a plan view of semiconductor package 600 comprisingsubstrate 602, and a plurality of dies 606, 608, and 610 stacked andarrayed on substrate 602. As shown in FIG. 6, each die stack comprisesdie 606 adhered to substrate 602, die 608 adhered to die 606, and die610 adhered to die 608. As a person of ordinary skill in the art willrecognize, dies 606, 608, and 610 may be identical or distinct devices.Dies 606, 608, and 610 are not limited in any way by their depiction inFIG. 6; there may be additional dies stacked amongst dies 606, 608, and610. Further, as shown in FIG. 6, die 610 has a smaller footprint thandie 608, which in turn has a smaller footprint than die 606. FIG. 6illustrates only one embodiment of possible arrangements of dies. Inother embodiments, die 610 may have a larger or smaller footprint thandie 608, which may have a larger or smaller footprint than die 606 orany other dies present in the stack.

Package 600 further comprises a plurality of flow controllers 620interspersed between die stacks. FIG. 6 illustrates a certain placementof flow controllers 620. A person of ordinary skill in the art willrecognize that the scope of possible embodiments is not limited to theillustrated positioning. For example, flow controllers 620 can bepositioned outside a perimeter defined by arrayed dies 606, 608 and 610.Alternatively, flow controllers 620 can be positioned between some dies606, 608, and 610, but not others. Positioning of flow controllers 620can be altered to affect molding compound flow as desired.

FIG. 7 shows a plan view of a prior art semiconductor package 700comprising substrate 702, and a plurality of dies 706, 708, and 710stacked and arrayed on substrate 702. As shown in FIG. 7, each die stackcomprises die 706 adhered to substrate 702, die 708 adhered to die 706,and die 710 adhered to die 708. A person of ordinary skill in the artwill recognize that dies 706, 708, and 710 may be identical or distinctdevices. Dies 706, 708, and 710 are not limited in any way by theirdepiction in FIG. 7; there may be additional dies stacked amongst dies706, 708, and 710. Further, as shown in FIG. 7, die 710 has a smallerfootprint than die 708, which in turn has a smaller footprint than die706. FIG. 7 illustrates only one embodiment of possible arrangements ofdies. In other embodiments, die 710 may have a larger or smallerfootprint than die 708, which may have a larger or smaller footprintthan die 706 or any other dies present in the stack.

Package 700 further comprises molding compound 714, shown during anencapsulation process. In this illustrated embodiment, molding compound714 flows in a direction from first edge 715 to second edge 717. Forclarity, molding compound 714 is only shown over a portion of package700. A first leading edge 726 of molding compound 714 is shown at apoint almost half way through the encapsulation process. A secondleading edge 728 is shown at a point nearing the end of theencapsulation process. Flow of molding compound 714 is uneven andresults in defect formation, such as in area 732. Some dies 706, 708,and/or 710 near second edge 717 may not be encapsulated, or may not befully encapsulated, due to areas 732.

For comparison, FIG. 8 is a plan view of semiconductor package 800according to one embodiment of the present invention, comprisingsubstrate 802 and a plurality of dies 806, 808, and 810 stacked andarrayed on substrate 802, where dies 806, 808, and 810 are partiallyobscured by molding compound 814. As shown in FIG. 8, each die stackcomprises die 806 adhered to substrate 802, die 808 adhered to die 806,and die 810 adhered to die 808. A person of ordinary skill in the artwill recognize that dies 806, 808, and 810 may be identical or distinctdevices. Dies 806, 808, and 810 are not limited in any way by theirdepiction in FIG. 8; there may be additional dies stacked amongst dies806, 808, and 810. Further, as shown in FIG. 8, die 810 has a smallerfootprint than die 808, which in turn has a smaller footprint than die806. FIG. 8 illustrates only one embodiment of possible arrangements ofdies. In other embodiments, die 810 may have a larger or smallerfootprint than die 808, which may have a larger or smaller footprintthan die 806 or any other dies present in the stack.

Package 800 further comprises a plurality of flow controllers 820interspersed between stacked dies 806, 808, and 810. As in FIG. 7,encapsulation is in progress, as indicated by molding compound 814flowing in a direction from first edge 815 to second edge 817. Forclarity, molding compound 814 is only shown over a portion of package800. A first leading edge 826 of molding compound 814 is shown at apoint almost half way through the encapsulation process. A secondleading edge 828 is shown at a point nearing the end of encapsulation.However, in this embodiment, flow controllers 820 have resulted in moreuniform first and second leading edges 826 and 828 of molding compound814, when compared with leading edges 726 and 728 in FIG. 7. As aresult, some embodiments of the present invention can substantiallyreduce flow defects. For example, dies 806, 808, and 810 will not beleft exposed, and/or there will be a reduction in exposure after theencapsulation process is complete. Moreover, at this stage inencapsulation, exposed areas 832 are much smaller than exposed areas 732in FIG. 7, and thus, formation of air pockets is less likely. Flowcontrollers 820 thus can substantially reduce, and potentiallyeliminate, the presence of defects such as voids, wire sweeping, andwire shorts, which can form during encapsulation.

FIG. 9 shows a plan view of semiconductor package 900 duringencapsulation. Package 900 comprises substrate 902, a row of four dies910, a plurality of bonding wires 918 electrically coupling dies 910 tosubstrate 902, and one or more flow controllers 922. Package 900 furthercomprises a molding compound 914 flowing in a diagonal direction acrosspackage 900 from a first corner 915 to a second corner 917. For clarity,molding compound 914 is only shown over a portion of package 900. Afirst leading edge 926 of molding compound 914 is shown at a point abouta quarter of the way through encapsulation. A second leading edge 928 isshown at a point about half way through encapsulation. Flow controllers922 provide for substantially smooth leading edges 926 and 928. In thisembodiment, flow controllers 922 are located substantially within aperimeter defined by bond wires 918. In other embodiments, flowcontrollers 922 can be positioned elsewhere, such as outside a perimeterdefined by bond wires 918, or partly within and partly outside theperimeter defined by bond wires 918.

FIG. 10 shows a cross sectional view of one possible embodiment,comprising substrate 1002 supporting dies 1004, 1006 and 1008, which areadhered via die adhesive layers 1003, 1005, and 1007. Adhesive layer1003 couples die 1004 to substrate 1002, adhesive layer 1005 couples die1006 to die 1004, and adhesive layer 1007 couples die 1008 to die 1006.Dies 1004, 1006, and 1008 may be identical or distinct devices. Dies1004, 1006, and 1008 are not limited in any way by their depiction inFIG. 10; there may be additional dies stacked amongst dies 1004, 1006,and 1008. Further, as shown in FIG. 10, die 1008 has a smaller footprintthan die 1006, which in turn has a smaller footprint than die 1004. FIG.10 illustrates only one embodiment of possible die arrangement. In otherembodiments, die 1008 may have a larger or smaller footprint than die1006, which may have a larger or smaller footprint than die 1004 or anyother dies present in the stack.

Dies 1004, 1006, and 1008 are electrically coupled to substrate 1002 bya plurality of bonding wires 1018. This embodiment further comprises alayer of flow controller material 1020 and encapsulant 1014. Flowcontroller 1020 can be applied such that it contacts substrate 1002,dies 1004, 1006, and 1008, and bonding wires 1018, as shown in FIG. 10.In this embodiment, flow controller 1020 substantially can contact allexposed surfaces within the semiconductor package, including thesurfaces of substrate 1002, dies 1004, 1006, and 1008, bond wires 1018,and any passive devices present. Flow controller 1020 can contactsubstantially the entire length of at least one bond wire 1018 such thatbond wire 1018 is substantially embedded within flow controller 1020.Further, FIG. 10 optionally can include a saw line 1240, as in FIG. 12.The embodiment illustrated in FIG. 10 comprises bond wires 1018;however, in alternative embodiments, dies 1004, 1006, and 1008 can beelectrically coupled to substrate 1002 without bond wires 1018. In thisalternative embodiment, flow controllers 1020 can remain in contact withdies 1004, 1006, and 1008 as well as substrate 1002.

FIG. 11 shows a cross sectional view of an another alternativeembodiment, comprising substrate 1102 and dies 1104, 1106, and 1108adhered to substrate 1102 via adhesive layers 1103, 1105, and 1107, andelectrically coupled to substrate 1102 by a plurality of bond wires1118. Adhesive layer 1103 couples die 1104 to substrate 1102, adhesivelayer 1105 couples die 1106 to die 1104, and adhesive layer 1107 couplesdie 1108 to die 1106. Dies 1104, 1106, and 1108 may be identical ordistinct devices. Dies 1104, 1106, and 1108 are not limited in any wayby their depiction in FIG. 11; there may be additional dies stackedamongst dies 1104, 1106, and 1108. Further, as shown in FIG. 11, die1108 has a smaller footprint than die 1106, which in turn has a smallerfootprint than die 1104. FIG. 11 illustrates only one embodiment ofpossible die arrangement. In other embodiments, die 1108 may have alarger or smaller footprint than die 1106, which may have a larger orsmaller footprint than die 1104 or any other dies present in the stack.

The embodiment illustrated in FIG. 11 further comprises an encapsulant1114 and one or more flow controllers 1120 positioned adjacent to bondwires 1118. In this embodiment, and in contrast to FIG. 10, flowcontrollers 1120 contact neither dies 1104, 1106, and 1108 nor bondwires 1118. Flow controllers 1120 are coupled to substrate 1102, but donot pass under or around bond wires 1118. In the illustrated embodimentof FIG. 11, the heights of flow controller 1120 and stacked dies 1104,1106 and 1108 are substantially similar. However, in other embodiments,flow controller 1120 heights can be selected for a particular purpose.As a result, in other embodiments, there is no particular heightrequired for flow controller 1120, nor does its height need besubstantially similar to the height of stacked dies 1104, 1106, and1108. Further, the embodiment illustrated in FIG. 11 optionally caninclude a saw line 1340, as in FIG. 13.

FIG. 12 shows a cross sectional view of semiconductor package 1200,comprising substrate 1202 supporting a first stack of dies 1204, 1206and 1208 adhered via adhesive layers 1203, 1205, and 1207, and a secondstack of dies 1234, 1236, and 1238 adhered via die adhesive layers 1233,1235, and 1237. Adhesive layer 1203 couples die 1204 to substrate 1202,adhesive layer 1205 couples die 1206 to die 1204, adhesive layer 1207couples die 1208 to die 1206, adhesive layer 1233 couples die 1234 tosubstrate 1202, adhesive layer 1235 couples die 1236 to die 1234, andadhesive layer 1237 couples die 1238 to die 1236. Dies 1204, 1206, 1208,1234, 1236, and 1238 may be identical or distinct devices. Dies 1204,1206, 1208, 1234, 1236, and 1238 are not limited in any way by theirdepiction in FIG. 12; there may be additional dies stacked amongst showndies 1204, 1206, 1208, 1234, 1236, and 1238. Further, as shown in FIG.12, die 1208 has a smaller footprint than die 1206, which in turn has asmaller footprint than die 1204, while 1238 has a smaller footprint thandie 1236, which in turn has a smaller footprint than die 1234. FIG. 12illustrates only one embodiment of possible die arrangement. In otherembodiments, die 1208 may have a larger or smaller footprint than die1206, which may have a larger or smaller footprint than die 1204 or anyother dies present in the stack. Similarly, die 1238 may have a largeror smaller footprint than die 1236, which may have a larger or smallerfootprint than die 1234 or any other die present in the stack.

Dies 1204, 1206, 1208, 1234, 1236, and 1238 are electrically coupled tosubstrate 1202 by a plurality of bond wires 1218. This embodimentfurther comprises encapsulant 1214, first flow controller 1220 a andsecond flow controller 1220 b. Package 1200 is designed for singulationalong saw line 1240 to produce a plurality of individual packages. Sawline 1240 separates first flow controller 1220 a from second flowcontroller 1220 b. First flow controller 1220 a can be identical tosecond flow controller 1220 b. Alternatively, first flow controller 1220a can differ from second flow controller 1220 b in size, shape, and/orcomposition. Additionally, FIG. 12 may represent the cross section ofonly a portion of an entire semiconductor package. Alternativeembodiments may comprise multiple other die stacks, similar to dies1204, 1206, 1208, 1234, 1236, and 1238, as well as a plurality of otherflow controllers, similar to flow controllers 1220 a and 1220 b.

Flow controllers 1220 a and/or 1220 b can be positioned such that theycontact substrate 1202, dies 1204, 1206, 1208, 1234, 1236, and 1238 andbonding wires 1218, as shown in FIG. 12. In this embodiment, flowcontrollers 1220 a and 1220 b substantially can contact all exposedsurfaces within the semiconductor package, including the surfaces ofsubstrate 1202, dies 1204, 1206, 1208, 1234, 1236, and 1238, bond wires1218, and any passive devices present. Flow controllers 1220 a and/or1220 b can contact substantially the entire length of at least one bondwire 1218 such that bond wire 1218 is substantially embedded within flowcontrollers 1220 a and 1220 b. In this embodiment, flow controllers 1220a and 1220 b do not extend to cover the entire distance between firststacked dies 1204, 1206, and 1208 and second stacked dies 1234, 1236,and 1238 because there is an interruption between flow controllers 1220a and 1220 b along saw line 1240. Flow controllers 1220 a and 1220 b areadjacent to saw line 1240, but do not extend across it. In thisembodiment, flow controllers 1220 a and 1220 b will not be visible aftersingulation, because encapsulant 1214 fills the space between flowcontroller 1220 a and flow controller 1220 b.

The embodiment of FIG. 12 comprises bond wires 1218; however, inalternative embodiments, dies 1204, 1206, 1208, 1234, 1236, and 1238 canbe electrically coupled to substrate 1202 without bond wires 1218. Inthis alternative embodiment, flow controllers 1220 a and 1220 b canremain in contact with dies 1204, 1206, 1208, 1234, 1236, and 1238 aswell as substrate 1202.

FIG. 13 shows a cross sectional view of semiconductor package 1300comprising substrate 1302 supporting a first stack of dies 1304, 1306and 1308 adhered via adhesive layers 1303, 1305, and 1307, and a secondstack of dies 1334, 1336, and 1338 adhered via adhesive layers 1333,1335, and 1337. Adhesive layer 1303 couples die 1304 to substrate 1302,adhesive layer 1305 couples die 1306 to die 1304, adhesive layer 1307couples die 1308 to die 1306, adhesive layer 1333 couples die 1334 tosubstrate 1302, adhesive layer 1335 couples die 1336 to die 1334, andadhesive layer 1337 couples die 1338 to die 1336. Dies 1304, 1306, 1308,1334, 1336, and 1338 may be identical or distinct devices. Dies 1304,1306, 1308, 1334, 1336, and 1338 are not limited in any way by theirdepiction in FIG. 13; there may be additional dies stacked amongst showndies 1304, 1306, 1308, 1334, 1336, and 1338. Further, as shown in FIG.13, die 1308 has a smaller footprint than die 1306, which in turn has asmaller footprint than die 1304, while 1338 has a smaller footprint thandie 1336, which in turn has a smaller footprint than die 1334. FIG. 13illustrates only one embodiment of possible die arrangement. In otherembodiments, die 1308 may have a larger or smaller footprint than die1306, which may have a larger or smaller footprint than die 1304 or anyother dies present in the stack. Similarly, die 1338 may have a largeror smaller footprint than die 1336, which may have a larger or smallerfootprint than die 1334 or any other dies present in the stack.

Dies 1304, 1306, 1308, 1334, 1336, and 1338 are electrically coupled tosubstrate 1302 by a plurality of bond wires 1318. This embodimentfurther comprises an encapsulant 1314, first flow controller 1320 a andsecond flow controller 1320 b. Package 1300 subsequently will besingulated along saw line 1340 to produce a plurality of individualpackages. Saw line 1340 separates first flow controller 1320 a fromsecond flow controller 1320 b. First flow controller 1320 a can beidentical to second flow controller 1320 b. Alternatively, first flowcontroller 1320 a can differ from second flow controller 1320 b in size,shape, and/or composition. Additionally, FIG. 13 may represent the crosssection of only a portion of an entire semiconductor package.Alternative embodiments may comprise multiple other die stacks, similarto dies 1304, 1306, 1308, 1334, 1336, and 1338, as well as a pluralityof other flow controllers, similar to flow controllers 1320 a and 1320b.

Flow controllers 1320 a and/or 1320 b can be positioned such that theycontact neither dies 1304, 1306, 1308, 1334, 1336, and 1338 nor bondwires 1318 as shown in FIG. 13. Flow controllers 1320 a and 1320 b arecoupled to substrate 1302, but do not pass under or around bond wires1318. In this embodiment, flow controllers 1320 a and 1320 b do notextend to cover the entire distance between first stack of dies 1304,1306, and 1308 and second stack of dies 1334, 1336, and 1338 becausethere is an interruption between flow controllers 1320 a and 1320 balong saw line 1340. Flow controllers 1320 a and 1320 b are adjacent tosaw line 1340, but do not extend across it. In this embodiment, flowcontrollers 1320 a and 1320 b will not be visible after singulation,because encapsulant 1314 fills the space between flow controller 1320 aand flow controller 1320 b.

The embodiment illustrated in FIG. 13 comprises bond wires 1318;however, in alternative embodiments, dies 1304, 1306, 1308, 1334, 1336,and 1338 can be electrically coupled to substrate 1302 without bondwires 1318. In this embodiment, flow controllers 1320 a and 1320 b canremain coupled to substrate 1302 without contacting dies 1304, 1306,1308, 1334, 1336, or 1338.

In a further embodiment, illustrated in cross section by FIG. 14,package 1400 comprises substrate 1402 and dies 1404, 1406, and 1408adhered to substrate 1402 via adhesive layers 1403, 1405, and 1407.Adhesive layer 1403 couples die 1404 to substrate 1402, adhesive layer1405 couples die 1406 to die 1404, and adhesive layer 1407 couples die1408 to die 1406. Dies 1404, 1406, and 1408 may be identical or distinctdevices. Dies 1404, 1406, and 1408 are not limited in any way by theirdepiction in FIG. 14; there may be additional dies stacked amongst dies1404, 1406, and 1408. Further, as shown in FIG. 14, die 1408 has asmaller footprint than die 1406, which in turn has a smaller footprintthan die 1404. FIG. 14 illustrates only one embodiment of possible diearrangement. In other embodiments, die 1408 may have a larger or smallerfootprint than die 1406, which may have a larger or smaller footprintthan die 1404 or any other dies present in the stack.

This embodiment further comprises a plurality of bond wires 1418electrically coupling dies 1404, 1406, and 1408 to substrate 1402, anencapsulant 1414, and one or more dummy blocks 1444 adhered to substrate1402 via adhesive layer 1442. Dummy blocks 1444 are referred to as suchbecause they require an adhesive layer 1442. Dummy blocks 1444 can becomposed of a polymeric material or other materials commonly used in thesemiconductor industry. The combination of dummy block 1444 and adhesivelayer 1442 can control flow of molding compound 1414 duringencapsulation, and thus can function as a flow controller.Alternatively, dummy block 1444 can be coupled to yet another material,which would perform flow controlling functions. The embodiment of FIG.14 shows a single-layer dummy block 1444 coupled to adhesive layer 1442.Alternative embodiments can comprise a plurality of dummy block layerscoupled to adhesive layer 1442. For example, the scope of possibleembodiments encompasses the use of adhesive layer 1442 coupled to aninterposer, which is in turn coupled to dummy block 1444, which is inturn coupled to a separate flow controller material. Additional layerscan be added, or layers may be removed in various embodiments. The orderof layers presented is not restrictive.

Dummy blocks 1444 are positioned adjacent to bond wires 1418, such thatdummy blocks 1444 contact neither dies 1404, 1406, and 1408 nor bondwires 1418. Dummy blocks 1444 are coupled to substrate 1402, but do notpass under or around bond wires 1418. Adhesive layer 1442 may be appliedadjacent to bond wires 1418 as illustrated in FIG. 14. Alternatively,adhesive layer 1442 may be applied so that it contacts substrate 1402,dies 1404, 1406, and 1408, as well as bond wires 1418. In thisalternative embodiment, dummy block 1444 may still be positioned so thatit does not contact dies 1404, 1406, and 1408, or bond wires 1418.

As seen in FIG. 14, the heights of dummy block 1444 and stacked dies1404, 1406 and 1408 are substantially similar. However, in otherembodiments, dummy block 1444 height can be selected for a particularpurpose. As a result, in other embodiments, there is no particularheight required for dummy block 1444, nor does its height need besubstantially similar to the height of stacked dies 1404, 1406, and1408. Further, FIG. 14 optionally can include a saw line such as sawline 1340, of FIG. 13.

FIG. 15 is a flowchart of one embodiment of a method for making asemiconductor package. One or more flow controllers can be positionedfor association with a substrate optionally having at least one dieelectrically coupled thereto (step 1500). Flow controller volume,height, surface area, and/or shape can be selected to achieve thedesired effect on molding compound flow. Flow controllers are made usingany suitable material, including by way of example and withoutlimitation, die adhesive, die coating material, polymeric material,screen printing material, solder paste, or combinations thereof. Flowcontrollers can comprise a non-insulating material. Positioning of flowcontrollers can be accomplished via epoxy dispensing and attach systems,epoxy dotting and attach systems, die coating, screen printing, orcombinations thereof.

A molding compound is flowed over the surface of the substrate and flowcontrollers (step 1502). In some embodiments, flow controllers controlmolding compound flow, in order to provide a more uniform leading edge.Flow controllers also can decrease the flow rate relative to a packagedevoid of a flow controller or controllers. Once the semiconductorpackage has been encapsulated by molding compound, it can beincorporated into various electronic products (step 1504). A person ofordinary skill in the art will recognize that the order of steps aspresented in FIG. 15 is not strictly limited to that order, and thatother embodiments may reorder method steps.

FIG. 16 is a flowchart of one embodiment of a method for providing flowcontrollers during semiconductor package manufacture. A substrate can beprovided (step 1600), and one or more dies can be attached or otherwiseeffectively coupled to the substrate (step 1602). Afterwards, one ormore flow controllers can be provided (step 1604) and can be positionedas desired relative to other package components, such as the die ordies.

Alternatively, FIG. 17 is a flowchart of another embodiment of a methodfor using flow controllers for semiconductor package manufacture. Asubstrate can be provided (step 1700), and one or more flow controllerscan be provided (step 1702) and attached or otherwise effectivelycoupled to the substrate before die attachment (step 1704).

FIG. 18 is a flowchart of yet another embodiment of a method for usingflow controllers to manufacture a semiconductor package. A substrate canbe provided with one or more dies (step 1800). Wire bonding can beperformed (step 1802) to electrically couple the dies to the substrate,followed by positioning of one or more flow controllers (step 1804).

Alternatively, FIG. 19 is a flowchart of another embodiment of a methodfor using flow controllers to manufacture a semiconductor package. Asubstrate can be provided with one or more dies (step 1900). Flowcontrollers can be provided (step 1902) before wire bonding (step 1904)occurs.

FIG. 20 is a flowchart of one embodiment of a method for controllingmolding compound flow. A molding compound can be provided (step 2000).Flow controllers can be positioned to direct molding compound flow indesired directions (step 2002). In another embodiment, a substrate canbe provided (step 2004), and flow can be diverted away from certainareas of the substrate via flow controller placement (step 2006). Aperson of ordinary skill in the art will recognize that the order ofsteps as presented in FIG. 20 is not strictly limited to that order, andthat other embodiments may reorder method steps.

In view of the many possible embodiments to which the principles of thedisclosed invention may be applied, it should be recognized that theillustrated embodiments are only preferred examples of the invention andshould not be taken as limiting the scope of the invention. Rather, thescope of the invention is defined by the following claims. We thereforeclaim as our invention all that comes within the scope and spirit ofthese claims.

1. A semiconductor package, comprising: a substrate; at least one bondwire electrically coupling a die to the substrate; and a flow controllereffectively sized and positioned to control flow of a molding compound,where the flow controller contacts the at least one bond wire.
 2. Thesemiconductor package of claim 1, where a portion of the at least onebond wire is encircled by the flow controller.
 3. The semiconductorpackage of claim 1, where a portion of the at least one bond wire isembedded in the flow controller.
 4. The semiconductor package of claim1, where the flow controller is positioned to control molding compoundflow over all active components coupled to the substrate.
 5. Thesemiconductor package of claim 1, where at least a portion of the flowcontroller is positioned within a perimeter defined by the die.
 6. Thesemiconductor package of claim 1, further comprising plural dies, whereat least a portion of the flow controller is positioned between adjacentdies.
 7. The semiconductor package of claim 1, further comprising aconductive element electrically coupling the die to the substrate, whereat least a portion of the flow controller is positioned within aperimeter defined by the conductive element.
 8. The semiconductorpackage of claim 1, further comprising a plurality of bond wireselectrically coupling the die to the substrate, where the flowcontroller is located substantially within a perimeter defined by thebond wires of the die.
 9. The semiconductor package of claim 1, furthercomprising a plurality of bond wires electrically coupling the die tothe substrate, where the flow controller is located between adjacentbond wires and is coupled to the substrate.
 10. The semiconductorpackage of claim 1, further comprising a plurality of bond wireselectrically coupling the die to the substrate, where a first portion ofthe flow controller is located within a perimeter defined by the bondwires, and a second portion of the flow controller is located outside aperimeter defined by the bond wires.
 11. The semiconductor package ofclaim 1, where the flow controller is operatively coupled to thesubstrate.
 12. The semiconductor package of claim 1, where the flowcontroller comprises die adhesive, die coating material, polymericmaterial, screen printing material, solder paste, or combinationsthereof.
 13. The semiconductor package of claim 1, where the flowcontroller comprises a non-insulating material.
 14. The semiconductorpackage of claim 1, further comprising plural dies.
 15. Thesemiconductor package of claim 1, further comprising a passivecomponent.
 16. The semiconductor package of claim 1, where the flowcontroller is substantially cubic, rectangular, spherical, cylindrical,pyramidal, conical, amorphous, or combinations thereof.
 17. Thesemiconductor package of claim 1, further comprising a molding compound,wherein the volume of the flow controller is from about 1×10⁻³ CC toabout a volume equal to a difference between molding compound volume anddie volume.
 18. The semiconductor package of claim 1, further comprisinga molding compound, where flow controller volume is from about 1×10⁻² CCto about a volume equal to a difference between the molding compoundvolume and die volume.
 19. The semiconductor package of claim 1, whereinthe substrate comprises a semiconductor material, an insulating layer, aconducting material, or combinations thereof.
 20. The semiconductorpackage of claim 1, further comprising a molding compound, where thesemiconductor package is substantially devoid of sweeps, wire shorts,and internal and external voids in the molding compound.
 21. Thesemiconductor package of claim 1, further comprising plural flowcontrollers.
 22. The semiconductor package of claim 21, furthercomprising plural dies electrically coupled to the substrate.
 23. Thesemiconductor package of claim 21, where at least a first flowcontroller is a different size, shape, and/or composition from at leasta second flow controller.
 24. The semiconductor package of claim 21,where a first flow controller is positioned independently of a secondflow controller.
 25. The semiconductor package of claim 21, furthercomprising a plurality of bond wires electrically coupling the die tothe substrate, where a first flow controller is located substantiallywithin a perimeter defined by the bond wires of the die, and a secondflow controller is located adjacent to and outside the perimeter definedby the bond wires.
 26. The semiconductor package of claim 21, furthercomprising a plurality of bond wires electrically coupling the die tothe substrate, where a first flow controller is located substantiallywithin a perimeter defined by the bond wires of the die, and where afirst portion of a second flow controller is located within a perimeterdefined by the bond wires, and a second portion of the second flowcontroller is located outside a perimeter defined by the bond wires. 27.The semiconductor package of claim 21, further comprising a plurality ofbond wires electrically coupling the die to the substrate, where a firstflow controller is located substantially within a perimeter defined bythe bond wires of the die, a second flow controller is located adjacentto and outside a perimeter defined by the bond wires of the die, andwhere a first portion of a third flow controller is located within aperimeter defined by the bond wires, and a second portion of the thirdflow controller is located outside a perimeter defined by the bondwires.
 28. The semiconductor package of claim 1, further comprising aplurality of dies arrayed on the substrate.
 29. The semiconductorpackage of claim 28, where the plurality of dies each comprises a singlestack.
 30. The semiconductor package of claim 28, where at least one ofthe dies comprises a multiple stack.
 31. The semiconductor package ofclaim 28, further comprising a plurality of bond wires electricallycoupling the dies to the substrate, where a flow controller comprises:an adhesive layer coupled to a surface within the semiconductor package;and a dummy block coupled to the adhesive layer.
 32. The semiconductorpackage of claim 28, where a flow controller is located adjacent to andoutside a perimeter defined by the array of dies.
 33. The semiconductorpackage of claim 28, where a flow controller contacts the substrate andat least one die.
 34. The semiconductor package of claim 28, furthercomprising a plurality of bond wires electrically coupling the dies tothe substrate, where a flow controller is located substantially within aperimeter defined by the bond wires.
 35. The semiconductor package ofclaim 28, further comprising a plurality of bond wires electricallycoupling the dies to the substrate, where a flow controller is locatedadjacent to and outside a perimeter defined by the bond wires.
 36. Thesemiconductor package of claim 28, further comprising a plurality ofbond wires electrically coupling the dies to the substrate, where afirst portion of a flow controller is located outside a perimeterdefined by the bond wires and a second portion of the flow controller islocated within a perimeter defined by the bond wires.
 37. Thesemiconductor package of claim 28, further comprising a plurality ofbond wires electrically coupling the dies to the substrate, where theflow controller is a single integrated body contrasting the substrate,bond wires, and dies.
 38. The semiconductor package of claim 37, furthercomprising: plural flow controllers; and at least one saw lineindicating where the individual semiconductor packages are to besingulated; wherein each flow controller is located adjacent to, butdoes not continue over, the saw line.
 39. The semiconductor package ofclaim 28, further comprising a plurality of bond wires electricallycoupling the dies to the substrate, where a flow controller is locatedadjacent to a die stack, and does not contact the bond wires or thedies.
 40. The semiconductor package of claim 28, further comprising aplurality of flow controllers, where each flow controller is positionedbetween adjacent die attach areas.
 41. The semiconductor package ofclaim 28, where the flow controller has a height substantially the sameas the die height.
 42. The semiconductor package of claim 28, furthercomprising a molding compound, where the flow controller height isselected to optimize control of molding compound flow.
 43. Thesemiconductor package of claim 28, further comprising a moldingcompound, where flow controller height is from greater than 0.0 micronsto about the thickness of the molding compound.
 44. A method for makinga semiconductor package, comprising: providing a substrate; providing adie electrically coupled to the substrate via wire bonding providing aflow controller effectively sized and positioned to control flow of amolding compound, where the flow controller contacts the at least onebond wire.
 45. The method of claim 44, where a portion of the at leastone bond wire is encircled by the flow controller.
 46. The method ofclaim 44, where a portion of the at least one bond wire is embedded inthe flow controller.
 47. The method of claim 44, further comprisingproviding a plurality of flow controllers.
 48. The method of claim 44,where the semiconductor package is a polymeric ball grid array package.49. The method of claim 48, where the polymeric ball grid array packageis a plastic ball grid array package.
 50. The method of claim 44, wherethe semiconductor package is a fine ball grid array package.
 51. Themethod of claim 44, where the flow controller comprises a die adhesive,die coating material, polymeric material, screen printing material,solder paste, or combinations thereof.
 52. The method of claim 44,further comprising applying a flow controller to the substrate via epoxydispensing and attaching systems, epoxy dotting and attach systems, diecoating, screen printing, or combinations thereof.
 53. The method ofclaim 44, further comprising attaching a die to the substrate, where theflow controller is provided during die attachment to the substrate. 54.The method of claim 44, further comprising attaching a die to thesubstrate, where the flow controller is provided after die attachment tothe substrate.
 55. The method of claim 44, further comprisingpositioning the flow controller via a remote computer.
 56. The method ofclaim 44, where the flow controller is positioned on the substrate. 57.The method of claim 44, further comprising selecting an appropriatelocation, height, and/or width of the flow controller via a remotecomputer.
 58. The method of claim 44, further comprising: providing amolding compound; and flowing the molding compound over and about theflow controller.
 59. The method of claim 58, where the molding compoundcomprises a polymeric material, an epoxy, a ceramic or combinationsthereof.
 60. The method of claim 44, further comprising incorporatingthe semiconductor package into a computer, personal digital assistant,digital camera, or cellular telephone.
 61. The method of claim 44,further comprising including instructions for providing a flowcontroller on a substrate on a computer readable medium.
 62. Asemiconductor package, comprising: a substrate; a plurality of dieselectrically coupled to the substrate; at least one saw line forsingulating the semiconductor package; and at least one flow controllereffectively sized and positioned to control flow of a molding compound,where the at least one flow controller is positioned between at leasttwo semiconductor packages to be singulated.
 63. The semiconductorpackage of claim 62 where the at least one flow controller is locatedadjacent to the saw line.
 64. The semiconductor package of claim 62where the at least one flow controller is positioned across the sawline.